MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 69

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 30: Differential Output Signal
Reference Output Load
Figure 31: Reference Output Load for AC Timing and Output Slew Rate
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
X
Figure 31 represents the effective reference load of 25Ω used in defining the relevant
device AC timing parameters (except ODT reference timing) as well as the output slew
rate measurements. It is not intended to be a precise representation of a particular sys-
tem environment or a depiction of the actual load presented by a production tester.
System designers should use IBIS or other simulation tools to correlate the timing refer-
ence load to a system environment.
X
DUT
ZQ
DQS#
V
DQS
DQ
REF
Output Characteristics and Operating Conditions
V
DDQ
RZQ = 240Ω
Timing reference point
/2
R
X
TT
69
= 25Ω
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
V
TT
SS
= V
DDQ
1Gb: x4, x8, x16 DDR3 SDRAM
/2
X
© 2006 Micron Technology, Inc. All rights reserved.
V
V
V
MAX output
V
MIN output
OX(AC)max
OX(AC)min
OL
OH