MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 54

IC DDR3 SDRAM 1GBIT 78FBGA

MT41J256M4HX-15E:D TR

Manufacturer Part Number
MT41J256M4HX-15E:D TR
Description
IC DDR3 SDRAM 1GBIT 78FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (256M x 4)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
220mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Slew Rate Definitions for Differential Input Signals
Figure 22: Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK#
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and meas-
ured, as shown in Table 29 and Figure 22. The nominal slew rate for a rising signal is
defined as the slew rate between V
falling signal is defined as the slew rate between V
Table 29: Differential Input Slew Rate Definition
CK and DQS
reference
Differential Input
Input
(Linear Signals)
Slew Rates
Falling
Rising
Edge
ΔTF
diff
V
V
IH,diff,min
IL,diff,max
From
54
IL,diff,max
Measured
Electrical Specifications – DC and AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
and V
V
V
IH,diff,min
IL,diff,max
1Gb: x4, x8, x16 DDR3 SDRAM
To
IH,diff,min
IH,diff,min
ΔTR
diff
. The nominal slew rate for a
and V
© 2006 Micron Technology, Inc. All rights reserved.
V
V
IH,diff,min
IH,diff,min
IL,diff,max
Calculation
ΔTR,diff
ΔTF,diff
V
V
0
IH,diff,min
IL,diff,max
- V
- V
.
IL,diff,max
IL,diff,max

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