MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 71

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Slew Rate Definitions for Differential Output Signals
Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS#
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
The differential output driver is summarized in Table 47 (page 68). With the reference
load for timing measurements, the output slew rate for falling and rising edges is de-
fined and measured between V
Table 49: Differential Output Slew Rate Definition
DQS, DQS#
Differential Output Slew
Output
Rates (Linear Signals)
ΔTF
diff
Falling
Rising
Edge
Output Characteristics and Operating Conditions
71
OL(AC)
V
V
OH,diff(AC)
OL,diff(AC)
From
and V
Measured
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OH(AC)
ΔTR
1Gb: x4, x8, x16 DDR3 SDRAM
V
V
diff
OH,diff(AC)
OL,diff(AC)
for differential signals.
To
© 2006 Micron Technology, Inc. All rights reserved.
V
V
V
V
0
OH,diff(AC)
OL,diff(AC)
OH,diff(AC)
OH,diff(AC)
Calculation
ΔTR
ΔTF
- V
- V
diff
diff
OL,diff(AC)
OL,diff(AC)