MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 30

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Absolute Ratings
Table 6: Absolute Maximum Ratings
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
V
Symbol
IN
V
T
V
, V
DDQ
T
STG
DD
C
OUT
V
V
Voltage on any pin relative to V
DD
DD
Operating case temperature
supply voltage relative to V
supply voltage relative to V
Notes:
Storage temperature
Parameter
Stresses greater than those listed in Table 6 may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
1. V
2. MAX operating case temperature. T
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
greater than 0.6 × V
ing operation.
DD
and V
DDQ
SSQ
must be within 300mV of each other at all times, and V
SS
SS
DDQ
. When V
30
Min
–0.4
–0.4
–0.4
–55
0
DD
and V
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package.
DDQ
1.975
1.975
1.975
Max
1Gb: x4, x8, x16 DDR3 SDRAM
150
95
are less than 500mV, V
Electrical Specifications
Units
© 2006 Micron Technology, Inc. All rights reserved.
°C
°C
V
V
V
REF
REF
may be ≤300mV.
must not be
Notes
2, 3
1
C
dur-