MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 170

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 91: WRITE (BC4 OTF) to READ (BC4 OTF)
Command 1
DQS, DQS#
Address 3
DQ 4
CK#
CK
WRITE
Valid
T0
NOP
T1
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2.
3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ
4. DI n = data-in for column n.
5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
NOP
T2
t
command at Tn.
WTR controls the WRITE-to-READ delay to the same device and starts after
WL = 5
NOP
T3
NOP
T4
t WPRE
NOP
DI
T5
n
n + 1
DI
NOP
n + 2
T6
DI
n + 3
DI
t WPST
t BL = 4 clocks
NOP
T7
NOP
T8
NOP
T9
t
BL.
Indicates A Break in
Time Scale
T10
NOP
t WTR 2
Transitioning Data
NOP
T11
READ
Valid
Tn
Don’t Care
RL = 5