MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 201

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry)
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
There is a transition period around power-down entry (PDE) where the DRAM’s ODT
may exhibit either synchronous or asynchronous behavior. This transition period oc-
curs if the DLL is selected to be off when in precharge power-down mode by the setting
MR0[12] = 0. Power-down entry begins
and it ends when CKE is first registered LOW.
+ 1
gress when CKE goes LOW, power-down entry will end
mand rather than when CKE is first registered LOW. Power-down entry will then
become the greater of
ODT assertion during power-down entry results in an R
of
(MAX) and ODTL on ×
may result in an R
t
Table 88 (page 202) summarizes these parameters.
If the AL has a large value, the uncertainty of the state of R
is because ODTL on and ODTL off are derived from the WL and WL is equal to CWL +
AL. Figure 119 (page 202) shows three different cases:
• ODT_A: Synchronous behavior before
• ODT_B: ODT state changes during the transition period with
• ODT_C: ODT state changes after the transition period with asynchronous behavior
AOF (MIN) or as late as the greater of
ODTL on ×
(MAX)
t
t
AONPD (MIN) and ODTL on ×
CK or ODTL on + 1
t
CK +
TT
t
AON (MIN) and
change as early as the lesser of
t
t
t
CK. If a REFRESH command has been issued, and it is in pro-
ANPD and
CK +
t
201
AON (MAX). ODT deassertion during power-down entry
t
t
CK +
RFC - REFRESH command to CKE registered LOW.
t
AONPD (MAX) greater than ODTL on ×
t
AOFPD (MAX) and ODTL off ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
ANPD prior to CKE first being registered LOW,
AON (MIN) or as late as the greater of
t
ANPD
t
ANPD is equal to the greater of ODTL off
1Gb: x4, x8, x16 DDR3 SDRAM
t
AOFPD (MIN) and ODTL off ×
t
TT
RFC after the REFRESH com-
TT
change as early as the lesser
becomes quite large. This
© 2006 Micron Technology, Inc. All rights reserved.
t
AONPD (MIN) less than
t
CK +
t
AOF (MAX).
t
CK +
t
AONPD
t
t
AON
CK +