MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 203

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
The DRAM’s ODT may exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
t
registered HIGH.
The transition period is
ODT assertion during power-down exit results in an R
t
(MAX) and ODTL on ×
may result in an R
t
Table 88 (page 202) summarizes these parameters.
If the AL has a large value, the uncertainty of the R
because ODTL on and ODTL off are derived from the WL, and WL is equal to CWL + AL.
Figure 120 (page 204) shows three different cases:
• ODT C: asynchronous behavior before
• ODT B: ODT state changes during the transition period, with
• ODT A: ODT state changes after the transition period with synchronous response
ANPD prior to CKE first being registered HIGH, and it ends
AONPD (MIN) and ODTL on ×
AOF (MIN) or as late as the greater of
ODTL off ×
(MAX)
Asynchronous to Synchronous ODT Mode Transition (Power-
t
CK +
t
TT
ANPD is equal to the greater of ODTL off + 1
t
AOF (MIN) and ODTL off ×
change as early as the lesser of
t
CK +
t
ANPD plus
t
203
AON (MAX). ODT deassertion during power-down exit
t
CK +
t
XPDLL.
t
AON (MIN) or as late as the greater of
t
AOFPD (MAX) and ODTL off ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
ANPD
t
CK +
TT
t
AOFPD (MIN) and ODTL off ×
state becomes quite large. This is
t
AOF (MAX) greater than
TT
change as early as the lesser of
t
XPDLL after CKE is first
© 2006 Micron Technology, Inc. All rights reserved.
t
CK or ODTL on + 1
t
AOFPD (MIN) less than
t
CK +
Down Exit)
t
t
AOF (MAX).
AONPD
t
AOFPD
t
CK.
t
CK +