MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 51

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 19: Single-Ended Requirements for Differential Signals
Figure 20: Definition of Differential AC-Swing and
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
V
V
V
V
V
Table 27: Allowed Time Before Ringback (
DQS#
DD
IH,diff(AC)min
IH,diff(DC)min
IL,diff(DC)max
IL,diff(AC)max
V
V
V
/2 or V
IH,diff,min
IL,diff,max
DD
V
SS
Slew Rate (V/ns)
or V
V
V
or V
SEH,min
SEL,max
0.0
DDQ
DDQ
SSQ
/2
>4.0
4.0
3.0
2.0
1.9
1.6
t DVAC
half cycle
51
V
SEH
t
DVAC
Electrical Specifications – DC and AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DVAC (ps) at |V
350mV
DQS - DQS#
75
57
50
38
34
29
CK - CK#
CK or DQS
1Gb: x4, x8, x16 DDR3 SDRAM
t DVAC
t
DVAC) for CK - CK# and DQS -
V
SEL
IH,diff(AC)
© 2006 Micron Technology, Inc. All rights reserved.
to V
IL,diff(AC)
300mV
175
170
167
163
162
161
|