MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 39

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16: I
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
DD4W
0
1
2
3
4
5
6
7
Measurement Loop
16–23
24–31
32–39
40–47
48–55
56–63
8–15
Notes:
0
1
2
3
4
5
6
7
1. DQ, DQS, DQS# are midlevel when not driving in burst sequence.
2. DM is LOW.
3. Burst sequence is driven on each DQ signal by the WR command.
4. All banks open.
Electrical Specifications – I
WR
WR
D#
D#
D#
D#
D
D
0
1
1
1
0
1
1
1
1
0
1
1
1
0
1
1
0
0
1
1
0
0
1
1
Repeat sub-loop 0, use BA[2:0] = 1
Repeat sub-loop 0, use BA[2:0] = 2
Repeat sub-loop 0, use BA[2:0] = 3
Repeat sub-loop 0, use BA[2:0] = 4
Repeat sub-loop 0, use BA[2:0] = 5
Repeat sub-loop 0, use BA[2:0] = 6
Repeat sub-loop 0, use BA[2:0] = 7
39
0
0
1
1
0
0
1
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
1
1
1
1
1
1
1
DD
0
0
0
0
0
0
0
0
Specifications and Conditions
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
© 2006 Micron Technology, Inc. All rights reserved.
0
0
0
0
F
F
F
F
0
0
0
0
0
0
0
0
Definitions
00000000
00110011
–
–
–
–
–
–