MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 52

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Slew Rate Definitions for Single-Ended Input Signals
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Note:
Table 27: Allowed Time Before Ringback (
DQS# (Continued)
Setup (
tween the last crossing of V
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V
Hold (
tween the last crossing of V
nominal slew rate for a falling signal is defined as the slew rate between the last crossing
of V
Table 28: Single-Ended Input Slew Rate Definition
1. Below V
Input
Input Slew Rates
Setup
Hold
REF
IH(DC)min
(Linear Signals)
Slew Rate (V/ns)
t
IH and
t
and the first crossing of V
IS and
<1.0
IL(AC)
and the first crossing of V
1.4
1.2
1.0
t
t
DH) nominal slew rate for a rising signal is defined as the slew rate be-
DS) nominal slew rate for a rising signal is defined as the slew rate be-
Falling
Falling
Rising
Rising
Edge
REF
IL(DC)max
V
V
IL(DC)max
IH(DC)min
From
52
V
V
and the first crossing of V
REF
REF
IL(AC)max
Measured
and the first crossing of V
Electrical Specifications – DC and AC
REF
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DVAC (ps) at |V
350mV
.
(see Figure 21 (page 53)).
22
13
V
V
0
0
IH(AC)min
IL(AC)max
V
V
To
1Gb: x4, x8, x16 DDR3 SDRAM
REF
REF
t
DVAC) for CK - CK# and DQS -
IH,diff(AC)
IH(AC)min
REF
© 2006 Micron Technology, Inc. All rights reserved.
. Setup (
. Hold (
V
V
V
V
to V
IH(AC)min
REF
REF
IH(DC)min
Calculation
ΔTRSH
- V
- V
IL,diff(AC)
ΔTRS
ΔTFH
ΔTFS
300mV
IL(AC)max
IL(DC)max
159
155
150
150
t
IH and
t
IS and
- V
- V
REF
REF
|
t
t
DH)
DS)