MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 190

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 83: Mode Registers for R
Table 84: Mode Registers for R
Table 85: Timing Diagrams for Dynamic ODT
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Figure and Page
Figure 110 (page 191)
Figure 111 (page 191)
Figure 112 (page 192)
Figure 113 (page 193)
Figure 114 (page 193)
M9
0
0
0
0
1
1
1
1
M10
0
0
1
1
MR2 (R
MR1 (R
TT(WR)
M6
0
0
1
1
0
0
1
1
TT,nom
Note:
)
M9
0
1
0
1
)
1. RZQ = 240Ω. If R
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
M2
0
1
0
1
0
1
0
1
TT,nom
TT(WR)
R
TT,nom
Reserved
Reserved
RZQ/12
RZQ/4
RZQ/2
RZQ/6
RZQ/8
TT,nom
R
Off
TT(WR)
Reserved
(RZQ)
RZQ/4
RZQ/2
Dynamic ODT off: WRITE does not affect R
is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed.
(RZQ)
190
R
TT,nom
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Reserved
Reserved
120
Off
60
40
20
30
(Ohms)
1Gb: x4, x8, x16 DDR3 SDRAM
R
TT,nom
R
© 2006 Micron Technology, Inc. All rights reserved.
TT(WR)
Self refresh, write
Reserved
TT,nom
Self refresh
120
Mode Restriction
60
(Ohms)
Dynamic ODT
n/a
n/a
n/a