HD6412320 RENESAS [Renesas Technology Corp], HD6412320 Datasheet - Page 821

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HD6412320

Manufacturer Part Number
HD6412320
Description
Renesas 16-Bit Single-Chip Microcomputer H8S Family H8S-2300 Series
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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19.13
19.13.1 Features
The H8S/2328B F-ZTAT has 256 kbytes of on-chip flash memory. The features of the flash
memory are summarized below.
• Four flash memory operating modes
• Programming/erase methods
• Programming/erase times
• Reprogramming capability
• On-board programming modes
• Automatic bit rate adjustment
• Flash memory emulation by RAM
• Protect modes
⎯ Program mode
⎯ Erase mode
⎯ Program-verify mode
⎯ Erase-verify mode
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78 µs (typ.) per byte, and the erase time is 50 ms (typ.).
The flash memory can be reprogrammed minimum 100 times.
There are two modes in which flash memory can be programmed/erased/verified on-board:
⎯ Boot mode
⎯ User program mode
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
Overview of Flash Memory (H8S/2328B F-ZTAT)
Rev.6.00 Sep. 27, 2007 Page 791 of 1268
REJ09B0220-0600
Section 19 ROM

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