MC68HC908AZ32ACFU MOTOROLA [Motorola, Inc], MC68HC908AZ32ACFU Datasheet - Page 72

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MC68HC908AZ32ACFU

Manufacturer Part Number
MC68HC908AZ32ACFU
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

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FLASH Memory
Advance Information
72
NOTE:
The FLASH Programming Algorithm Flowchart is shown in
A. Programming and erasing of FLASH locations can not be performed
by code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address
within the FLASH array memory space such as the COP Control
Register (COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
D. Do not exceed t
cumulative high voltage programming time to the same row before next
erase. t
max. Please also see
E. The time between each FLASH address change (step 7 to step 7), or
the time between the last FLASH address programmed to clearing the
PGM bit (step 7 to step 10) must not exceed the maximum programming
time, t
F. Be cautious when programming the FLASH array to ensure that non-
FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm
or the byte to be programmed in step 7 of the algorithm. This applies
particularly to:
12. Clear the HVEN bit.
13. Wait for a time, t
Freescale Semiconductor, Inc.
For More Information On This Product,
normal read mode.
$FFCC-$FFFF: User Vector Area
PROG
HV
must satisfy this condition: t
max.
Go to: www.freescale.com
FLASH Memory
PROG
FLASH Memory Characteristics
RCV
maximum or t
, after which the memory can be accessed in
NVS
HV
+ t
maximum. t
NVH
+ t
68HC908AZ32A — Rev 0.0
PGS
HV
+ (t
is defined as the
PROG
on page 455.
Figure
MOTOROLA
X 64) ð t
4-4.
HV

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