MC68HC908AZ32ACFU MOTOROLA [Motorola, Inc], MC68HC908AZ32ACFU Datasheet - Page 70
MC68HC908AZ32ACFU
Manufacturer Part Number
MC68HC908AZ32ACFU
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908AZ32ACFU.pdf
(468 pages)
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FLASH Memory
4.7 FLASH Page Erase Operation
Advance Information
70
NOTE:
Use this step-by-step procedure to erase a page (128 bytes) of FLASH
memory to read as logic 1:
A. Programming and erasing of FLASH locations can not be performed
by code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address
within the FLASH array memory space such as the COP Control
Register (COPCTL) at $FFFF.
C. It is highly recommended that interrupts be disabled during
program/erase operations.
10. Wait for a time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH Control
2. Read the FLASH Block Protect Register (FLBPR).
3. Write any data to any FLASH address within the address range of
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Clear the ERASE bit.
8. Wait for time, t
9. Clear the HVEN bit.
Freescale Semiconductor, Inc.
For More Information On This Product,
Register (FLCR).
the page (128 byte block) to be erased.
normal read mode.
Go to: www.freescale.com
FLASH Memory
NVS
ERASE
NVH
RCV
.
.
, after which the memory can be accessed in
.
68HC908AZ32A — Rev 0.0
MOTOROLA
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