MRF5P20180 MOTOROLA [Motorola, Inc], MRF5P20180 Datasheet

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MRF5P20180

Manufacturer Part Number
MRF5P20180
Description
RF POWER FIELD EFFECT TRANSISTOR
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 1
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Thermal Resistance, Junction to Case
Designed for W–CDMA base station applications with frequencies from 1930
I
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
DQ
Derate above 25°C
Case Temperature 80°C, 120 W CW
Case Temperature 80°C, 38 W CW
IM3 — –37.5 dBc
ACPR — –41 dBc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
= 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
C
= 25°C
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
DD
Operation
Go to: www.freescale.com
DD
= 28 Volts,
Symbol
Symbol
V
R
V
CW
T
P
DSS
T
θJC
stg
GS
D
J
MRF5P20180R6
1990 MHz, 38 W AVG.,
LATERAL N–CHANNEL
CASE 375D–04, STYLE 1
RF POWER MOSFET
2 x W–CDMA, 28 V
–65 to +150
–0.5, +15
Value
Max
0.43
0.43
407
200
120
NI–1230
2.3
65
Order this document
MRF5P20180R6
by MRF5P20180/D
Watts
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF5P20180 Summary of contents

Page 1

... REV 1 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2003 For More Information On This Product Volts, DD Operation Go to: www.freescale.com Order this document by MRF5P20180/D MRF5P20180R6 1990 MHz AVG W–CDMA LATERAL N–CHANNEL RF POWER MOSFET CASE 375D–04, STYLE 1 NI–1230 Symbol Value ...

Page 2

... 1932.5 MHz 1942.5 MHz and f1 = 1977.5 MHz 1987.5 MHz) (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push–pull configuration. MRF5P20180R6 For More Information On This Product 25°C unless otherwise noted) Symbol ...

Page 3

... Microstrip Z7, Z8 0.081″ x 0.118″ Microstrip Z9, Z10 0.081″ x 0.079″ Microstrip Figure 1. MRF5P20180 Test Circuit Schematic Table 1. MRF5P20180 Test Circuit Component Designations and Values Part C1 1.8 pF 100B Chip Capacitor C2, C3, C4, C5, C6 100B Chip Capacitors C8 ...

Page 4

... Freescale Semiconductor, Inc. Figure 2. MRF5P20180 Test Circuit Component Layout MRF5P20180R6 For More Information On This Product to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 4. Two–Tone Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Tone Spacing MOTOROLA RF DEVICE DATA For More Information On This Product, TYPICAL CHARACTERISTICS Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 7. Pulse CW Output Power versus Go to: www.freescale.com µ Input Power MRF5P20180R6 5 ...

Page 6

... Freescale Semiconductor, Inc. Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5P20180R6 For More Information On This Product, 6 TYPICAL CHARACTERISTICS η Figure 9. 2-Carrier W-CDMA Spectrum ± ...

Page 7

... MHz Ω Ω 1930 6.54 – j16.04 4.06 – j5.56 1960 9.70 – j17.92 3.70 – j5.48 1990 13.88 – j20.46 3.64 – j5.76 = Test circuit impedance as measured from gate to gate, balanced configuration. = Test circuit impedance as measured from drain to drain, balanced configuration source load Go to: www.freescale.com MRF5P20180R6 7 ...

Page 8

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors Go to: www.freescale.com INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MOTOROLA RF DEVICE DATA MRF5P20180/D ...

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