DF2505FC26V Renesas Electronics America, DF2505FC26V Datasheet - Page 781

IC H8S/2505 MCU FLASH 144QFP

DF2505FC26V

Manufacturer Part Number
DF2505FC26V
Description
IC H8S/2505 MCU FLASH 144QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Datasheets

Specifications of DF2505FC26V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
20.8
1. Download time of on-chip program
2. Write to flash-memory related registers by DTC
3. Compatibility with programming/erasing program of conventional F-ZTAT H8S
4. Monitoring runaway by WDT
The programming program that includes the initialization routine and the erasing program that
includes the initialization routine are each 2 kbytes or less. Accordingly, when the CPU clock
frequency is 25 MHz, the download for each program takes approximately 130 μs at
maximum.
While an instruction in on-chip RAM is being executed, the DTC can write to the SCO bit in
FCCS that is used for a download request or FMATS that is used for MAT switching. Make
sure that these registers are not accidentally written to, otherwise an on-chip program may be
downloaded and damage RAM or a MAT switchover may occur and the CPU may get out of
control. Do not use DTC to program FLASH-related registers.
microcomputer
A programming/erasing program for flash memory used in the conventional F-ZTAT H8S
microcomputer which does not support download of the on-chip program by an SCO transfer
request cannot run in this LSI. Be sure to download the on-chip program to execute
programming/erasing of flash memory in this LSI.
Unlike the conventional F-ZTAT H8S microcomputer, no countermeasures are available for a
runaway by WDT during programming/erasing by the downloaded on-chip program. Prepare
countermeasures (e.g. use of the user branch routine or the periodic timer interrupts) for WDT
while taking the programming/erasing time into consideration as required.
Usage Notes
Rev. 6.00 Sep. 24, 2009 Page 733 of 928
Section 20 Flash Memory
REJ09B0099-0600

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