DF2214BQ16V Renesas Electronics America, DF2214BQ16V Datasheet - Page 720

• Manufacturer Part Number: DF2214BQ16V
• Description: IC H8S/2214 MCU FLASH 112-TFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2214BQ16V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-TFBGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218 - DEV EVAL KIT H8S/2218
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 Electrical Characteristics
18.6
Table 18.12 lists the flash memory characteristics.
Table 18.12 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Rewrite time
Data retention time
Programming Wait time after SWE1 bit setting *
Erasing
Notes: 1. Follow the program/erase algorithms when making the time settings.
Rev.4.00 Sep. 18, 2008 Page 658 of 872
REJ09B0189-0400
Flash Memory Characteristics
1
*
3
*
V
T
Wait time after PSU1 bit setting *
Wait time after P1 bit setting *
Wait time after P1 bit clearing *
Wait time after PSU1 bit clearing *
Wait time after PV1 bit setting *
Wait time after H'FF dummy write *
Wait time after PV1 bit clearing *
Wait time after SWE1 bit clearing *
Maximum number of writes *
Wait time after SWE1 bit setting *
Wait time after ESU1 bit setting *
Wait time after E1 bit setting *
Wait time after E1 bit clearing *
Wait time after ESU1 bit clearing *
Wait time after EV1 bit setting *
Wait time after H'FF dummy write *
Wait time after EV1 bit clearing *
Wait time after SWE1 bit clearing *
Maximum number of erases *
5
a
CC
CC
= -20°C to +75°C (program/erase operating temperature range)
1
= 2.7 V to 3.6 V, AV
= 3.0 V to 3.6 V(program/erase operating voltage range),
*
2
*
4
CC
1
*
1
1
1
*
*
4
*
= 2.7 V to 3.6 V, V
1
1
1
1
5
4
5
1
1
1
1
1
1
1
1
1
1
1
1
Symbol Min.
t
t
N
t
t
t
t
t
t
t
t
t
t
t
t
N1
N2
t
t
t
t
t
t
t
t
t
N
P
E
DRP
sswe
spsu
sp10
sp30
sp200
cp
cpsu
spv
spvr
cpv
cswe
sswe
sesu
se
ce
cesu
sev
sevr
sev
cswe
WEC
*
8
—
—
100 *
10
1
50
8
28
198
5
5
4
2
2
100
—
—
1
100
10
10
10
20
2
4
100
—
6
ref
= AV
Typ.
40
20
10000 *
—
1
50
10
30
200
5
5
4
2
2
100
—
—
1
100
10
10
10
20
2
4
100
—
CC
7
, V
Max.
200
1000
—
—
—
—
12
32
202
—
—
—
—
—
—
6 *
994 *
—
—
100
—
—
—
—
—
—
100
SS
4
= AV
4
Unit
ms/128
bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
SS
= 0 V,
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000