DF2214BQ16V Renesas Electronics America, DF2214BQ16V Datasheet - Page 287

• Manufacturer Part Number: DF2214BQ16V
• Description: IC H8S/2214 MCU FLASH 112-TFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2214BQ16V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-TFBGA
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2218 - DEV EVAL KIT H8S/2218
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Incrementing, decrementing, or holding a fixed value can be set separately for MARA and
MARB.
Whether a block is to be designated for MARA or for MARB is specified by the BLKDIR bit in
DMACRA.
To specify the number of transfers, if M is the size of one block (where M = 1 to 256) and N
transfers are to be performed (where N = 1 to 65,536), M is set in both ETCRAH and ETCRAL,
and N in ETCRB.
Figure 7.11 illustrates operation in block transfer mode when MARB is designated as a block area.
Address T
Address B
Legend:
Address
Address
Address
Address
Where :
Figure 7.11 Operation in Block Transfer Mode (BLKDIR = 0)
T
T
B
B
L
L
N
M
A
A
A
B
A
B
A
B
= L
= L
= L
= L
= Value set in MARA
= Value set in MARB
= Value set in ETCRB
= Value set in ETCRAH and ETCRAL
A
B
A
B
+ SAIDE · (–1)
+ DAIDE · (–1)
1st block
2nd block
Nth block
SAID
DAID
· (2
· (2
DTSZ
DTSZ
Consecutive transfer
of M bytes or words
is performed in
response to one
request
· (M · N – 1))
· (N – 1))
Transfer
Rev.4.00 Sep. 18, 2008 Page 225 of 872
Block area
Section 7 DMA Controller
REJ09B0189-0400
Address T
Address B
B
B