LM3S101-CRN20-XNPP ETC1 [List of Unclassifed Manufacturers], LM3S101-CRN20-XNPP Datasheet - Page 273

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LM3S101-CRN20-XNPP

Manufacturer Part Number
LM3S101-CRN20-XNPP
Description
Microcontroller
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
Electrical Characteristics
17.1.5
17.1.6
17.2
17.2.1
273
Table 17-4. Power Specifications
Power-Up and Low-Voltage (Brown-Out) Detect Characteristics
Table 17-5. Power-Up and Brown-Out Detect Characteristics
a. The internal power-on reset circuit may be used unless the power supply slew rate (SR
Flash Memory Characteristics
Table 17-6. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
TBD
IDD
IDD
V
t
V
t
PE
T
T
T
T
POR
BOR
erase
ret
TH
BTH
prog
me
Parameter
Parameter
Parameter
following relation. If so, the brown-out detector triggers immediately after the internal reset is released:
SR
cyc
sleep
deepsleep
a
PS
< (V
BTH
–V
TH
Parameter Name
Sleep mode
Deep-sleep mode
Parameter Name
Power-up threshold voltage
Power-up assertion time
Brown-out threshold voltage
Brown-out assertion time
Parameter Name
Maximum number of guaranteed program/
erase cycles
Data retention at average operating
temperature of 85°C
Word program time
Page erase time
Mass erase time
)/ t
POR
a
before failure
Preliminary
10,000
Min
Min
Min
200
10
20
20
Nom
Nom
Nom
TBD
TBD
500
10
2
PS
) is less than the
Max
Max
Max
3
March 22, 2006
cycles
years
Unit
Unit
Unit
ms
ms
ms
μA
μA
μs
μs
V
V

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