P2503NVG ETC1 [List of Unclassifed Manufacturers], P2503NVG Datasheet

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P2503NVG

Manufacturer Part Number
P2503NVG
Description
N P-Channel Enhancement Mode Enhancement Mode
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
P2503NVG
Manufacturer:
NIKO-SEM
Quantity:
20 000
Company:
Part Number:
P2503NVG
Quantity:
2 500
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE RATINGS
1
2
ELECTRICAL CHARACTERISTICS (T
PRODUCT SUMMARY
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
Junction & Storage Temperature Range
Continuous Drain Current
Power Dissipation
Junction-to-Ambient
N-Channel
P-Channel
THERMAL RESISTANCE
PARAMETER
PARAMETERS/TEST CONDITIONS
V
(BR)DSS
-30
30
1
R
25mΩ
45mΩ
DS(ON)
N- & P-Channel Enhancement Mode
-5A
C
7A
I
SYMBOL
D
= 25 °C Unless Otherwise Noted)
C
V
Field Effect Transistor
V
= 25 °C, Unless Otherwise Noted)
(BR)DSS
GS(th)
T
T
T
T
C
C
C
C
SYMBOL
= 25 °C
= 70 °C
= 25 °C
= 70 °C
R
θJA
STATIC
V
V
V
V
DS
DS
GS
GS
= V
TEST CONDITIONS
= V
= 0V, I
= 0V, I
1
GS
GS
, I
, I
TYPICAL
D
D
D
D
SYMBOL
= -250µA
= 250µA
= -250µA
= 250µA
T
V
V
j
I
, T
P
I
DM
DS
GS
D
D
stg
N-Channel P-Channel UNITS
N-Ch
P-Ch
N-Ch
P-Ch
MAXIMUM
±20
30
20
7
6
62.5
-55 to 150
MIN
1.3
-30
30
-1
2
1
P2503NVG
LIMITS
±20
-30
-20
TYP MAX
-1.5
-5
-4
1.5
G : GATE
D : DRAIN
S : SOURCE
May-12-2004
Lead-Free
UNITS
°C / W
-2.5
2.5
SOP-8
°C
W
V
V
A
UNIT
V

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P2503NVG Summary of contents

Page 1

... I = 250µ (BR)DSS -250µ 250µ GS(th -250µ P2503NVG Lead-Free G : GATE D : DRAIN S : SOURCE N-Channel P-Channel UNITS 30 -30 DS ±20 ± - 1.3 -55 to 150 stg MAXIMUM UNITS 62.5 ° ...

Page 2

... V = 10V 1MHz oss P-Channel -10V 1MHz N- rss N-Channel 0. (BR)DSS P-Channel (BR)DSS - P2503NVG Lead-Free N-Ch ±100 P-Ch ±100 N- °C N-Ch 10 P-Ch - °C N-Ch 20 P-Ch - N-Ch 19 P-Ch 11 N-Ch 790 P-Ch 690 N-Ch 175 ...

Page 3

... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2503NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Field Effect Transistor N-Channel t ...

Page 4

... NIKO-SEM N- & P-Channel Enhancement Mode N-CHANNEL Field Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0 0 Body Diode Forward Voltage( P2503NVG SOP-8 Lead-Free T = 125 ° ° C -55 ° C 0.4 0.6 0.8 1.0 1.2 1.4 May-12-2004 ...

Page 5

... NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 5 P2503NVG SOP-8 Lead-Free May-12-2004 ...

Page 6

... NIKO-SEM P-CHANNEL N- & P-Channel Enhancement Mode Field Effect Transistor 100 0.1 0.01 0.001 6 P2503NVG 125 ° -55 ° ° 0.2 0.4 0.6 0.8 1 Body Diode Forward Voltage(V) SD SOP-8 Lead-Free 1.2 1.4 May-12-2004 ...

Page 7

... NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor 7 P2503NVG SOP-8 Lead-Free May-12-2004 ...

Page 8

... N- & P-Channel Enhancement Mode SOIC-8(D) MECHANICAL DATA Dimension Min. A 4.8 3.8 B 5.8 C 0.38 0.445 D E 1. Field Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P2503NVG mm Min. Typ. 0.5 0.715 0.18 0.254 0.22 0° 4° May-12-2004 SOP-8 Lead-Free Max. 0.83 0.25 8° ...

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