MC68HC908JL8 MOTOROLA [Motorola, Inc], MC68HC908JL8 Datasheet - Page 56

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MC68HC908JL8

Manufacturer Part Number
MC68HC908JL8
Description
Motorola reserves the right to make changes without further notice to any products herein
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

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FLASH Memory (FLASH)
4.8 FLASH Block Protection
Technical Data
56
NOTE:
Due to the ability of the on-board charge pump to erase and program the
FLASH memory in the target application, provision is made to protect
blocks of memory from unintentional erase or program operations due to
system malfunction. This protection is done by use of a FLASH block
protect register (FLBPR). The FLBPR determines the range of the
FLASH memory which is to be protected. The range of the protected
area starts from a location defined by FLBPR and ends to the bottom of
the FLASH memory ($FFFF). When the memory is protected, the HVEN
bit cannot be set in either erase or program operations.
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit
When the FLBPR is program with all 0’s, the entire memory is protected
from being programmed and erased. When all the bits are erased
(all 1’s), the entire memory is accessible for program and erase.
When bits within the FLBPR are programmed, they lock a block of
memory, address ranges as shown in
Register. Once the FLBPR is programmed with a value other than $FF,
any erase or program of the FLBPR or the protected block of FLASH
memory is prohibited. The FLBPR itself can be erased or programmed
only with an external voltage, V
also allows entry from reset into the monitor mode.
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
FLASH Memory (FLASH)
TST
, present on the IRQ pin. This voltage
4.8.1 FLASH Block Protect
MC68HC908JL8
MOTOROLA
Rev. 2.0

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