s71ws256nc0bawa30 Meet Spansion Inc., s71ws256nc0bawa30 Datasheet - Page 42

• Manufacturer Part Number: s71ws256nc0bawa30
• Description: Stacked Multi-chip Product Mcp 256/512/128 Megabit 32m/16m/8m X 16 Bit Cmos 1.8 Volt-only Simultaneous Read/write, Burst-mode Flash Memory With 128/64megabit 8m/4m X 16-bit Psram.
• Manufacturer: Meet Spansion Inc.

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Cycle
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Unlimited additional sectors may be selected for erase; command(s) must be written within t
After the command sequence is written, a sector erase time-out of no less than t
ing the time-out period, additional sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any sequence, and the number of sectors may be
from one sector to all sectors. The time between these additional cycles must be less than t
Any sector erase address and command following the exceeded time-out (t
be accepted. Any command other than Sector Erase or Erase Suspend during the time-out period
resets that bank to the read mode. The system can monitor DQ3 to determine if the sector erase
timer has timed out (See the
begins from the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and ad-
dresses are no longer latched. Note that while the Embedded Erase operation is in progress, the
system can read data from the non-erasing banks. The system can determine the status of the
erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. Refer to
for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once that
bank has returned to reading array data, to ensure data integrity.
Figure 10.5 illustrates the algorithm for the erase operation. Refer to the
Performance
The following is a C source code example of using the sector erase function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Sector Erase Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x555 ) = 0x0080;
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)sector_address )
Sector Erase Command
Setup Command
Description
Unlock
Unlock
Unlock
Unlock
section for parameters and timing diagrams.
Table 10.15 Software Functions and Sample Code
A d v a n c e
S71WS-Nx0 Based MCPs
DQ3: Sector Erase Timeout State Indicator
Operation
Write
Write
Write
Write
Write
Write
= 0x0030;
Sector Address
Base + AAAh
Base + 554h
Base + AAAh
Base + AAAh
Base + 554h
Byte Address
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write sector erase command
I n f o r m a t i o n
Sector Address
Word Address
Base + 555h
Base + 2AAh
Base + 555h
Base + 555h
Base + 2AAh
S71WS-N_01_A4 September 15, 2005
Erase and Programming
Write Operation Status
section.) The time-out
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*/
*/
*/
*/
00AAh
00AAh
0055h
0080h
0055h
0030h
Data
) may or may not
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.
occurs. Dur-
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.