R5F61668RD50FPV Renesas Electronics America, R5F61668RD50FPV Datasheet - Page 363
![no-image](/images/manufacturer_photos/0/5/560/renesas_electronics_america_sml.jpg)
R5F61668RD50FPV
Manufacturer Part Number
R5F61668RD50FPV
Description
MCU 3V 1024K I-TEMP 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668RN50FPV.pdf
(1506 pages)
Specifications of R5F61668RD50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R5F61668RD50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 363 of 1506
- Download datasheet (9Mb)
The time between the PALL or PRE command and the subsequent REF command can be changed
by wait cycle insertion. The number of wait cycles is selected from one to three cycles by bits
TPC1 and TPC0 in DRACCR. Set the bit according to the SDRAM to be used and the frequency
of this LSI so that the number of wait cycles can be optimal.
Figure 9.77 shows a timing example when the one wait cycles are inserted.
Precharge-sel
Address bus
Figure 9.77 Auto-Refresh Timing (TPC1 = 0, TPC0 = 1)
SDRAMφ
RD/WR
RAS
CAS
CKE
WE
CS
BS
PALL
TR
p1
TR
NOP
p2
High
High
High
REF
TR
r
Rev. 2.00 Sep. 24, 2008 Page 329 of 1468
TR
c1
NOP
Section 9 Bus Controller (BSC)
TR
c2
REJ09B0412-0200
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