R5F61668RD50FPV Renesas Electronics America, R5F61668RD50FPV Datasheet - Page 345

• Manufacturer Part Number: R5F61668RD50FPV
• Description: MCU 3V 1024K I-TEMP 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61668RD50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

9.11.6
The CAS latency is controlled by bits W21 and W20 in WTCRB. Table 9.27 lists the setting and
CAS latency. CAS latency control cycles (Tcl) are inserted in a read cycle according to the W21
and W20 settings. WTCRB can be specified regardless of bit AST2 in ASTCR.
Figure 9.62 shows a timing example when SDRAM with a CAS latency of 3 is in use.
Bits W21 and W20 is initialized to B'11.
Table 9.27 CAS Latency Setting
W21
0
1
CAS Latency Control
W20
0
1
0
1
Description
Setting prohibited
SDRAM with CAS latency of 2 is in use
SDRAM with CAS latency of 3 is in use
SDRAM with CAS latency of 4 is in use
Rev. 2.00 Sep. 24, 2008 Page 311 of 1468
Section 9 Bus Controller (BSC)
Number of CAS
Latency Cycles

1
2
3
REJ09B0412-0200