R5F61668RD50FPV Renesas Electronics America, R5F61668RD50FPV Datasheet - Page 353
![no-image](/images/manufacturer_photos/0/5/560/renesas_electronics_america_sml.jpg)
R5F61668RD50FPV
Manufacturer Part Number
R5F61668RD50FPV
Description
MCU 3V 1024K I-TEMP 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668RN50FPV.pdf
(1506 pages)
Specifications of R5F61668RD50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R5F61668RD50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 353 of 1506
- Download datasheet (9Mb)
9.11.11 Controlling Byte and Word Accesses
When 16-bit bus SDRAM is used, byte and word accesses are performed through the control of
DQMLU and DQMLL.
Figures 9.69 and 9.70 show control timing examples of the DQM signals in the big endian format.
Figure 9.71 shows a connection example when the DQM signals are used for the byte and word
control.
Figure 9.69 Control Timing Example of Byte Control by DQM in 16-Bit Access Space
Precharge-sel
Address bus
(Read Access with Lowest Bit of Address = B'0)
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
PALL
Row address
T
p
ACTV
address
Row
T
r
High
High
Hi-Z
READ
T
c1
Column address
Rev. 2.00 Sep. 24, 2008 Page 319 of 1468
T
cl
NOP
T
c2
Section 9 Bus Controller (BSC)
REJ09B0412-0200
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