HD6417750SBP200 Renesas Electronics America, HD6417750SBP200 Datasheet - Page 567

IC SUPERH MPU ROMLESS 256BGA

HD6417750SBP200

Manufacturer Part Number
HD6417750SBP200
Description
IC SUPERH MPU ROMLESS 256BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SBP200

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 2.07 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SBP200
Manufacturer:
HITACHI
0
Part Number:
HD6417750SBP200
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Pipelined Access: When the RASD bit is set to 1 in MCR, pipelined access is performed between
an access by the CPU and an access by the DMAC, or in the case of consecutive accesses by the
DMAC, to provide faster access to synchronous DRAM. As synchronous DRAM is internally
divided into two or four banks, after a READ or WRIT command is issued for one bank it is
possible to issue a PRE, ACTV, or other command during the CAS latency cycle or data latch
cycle, or during the data write cycle, and so shorten the access cycle.
CKIO
Bank
Precharge-sel
Address
CSn
RD/WR
RAS
CASS
DQMn
D63–D0
(read)
BS
CKE
DACKn
(SA: IO → memory)
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.
Figure 13.37 Burst Write Timing (Different Row Addresses)
Tpr
Row
H/L
Tpc
Tr
Row
Row
Row
Trw
Tc1
c1
Tc2
Rev.7.00 Oct. 10, 2008 Page 481 of 1074
c2
Section 13 Bus State Controller (BSC)
H/L
c1
Tc3
c3
Tc4
c4
Trwl
REJ09B0366-0700
Trwl
Trwl

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