HD6417750SBP200 Renesas Electronics America, HD6417750SBP200 Datasheet - Page 41

IC SUPERH MPU ROMLESS 256BGA

HD6417750SBP200

Manufacturer Part Number
HD6417750SBP200
Description
IC SUPERH MPU ROMLESS 256BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SBP200

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 2.07 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SBP200
Manufacturer:
HITACHI
0
Part Number:
HD6417750SBP200
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Item
22.3.3 Bus Timing
Figure 22.25
Synchronous DRAM
Normal Read Bus Cycle:
ACT + READ
Commands,
Burst (RASD = 1,
RCD[1:0] = 01, CAS
Latency = 3)
Figure 22.26
Synchronous DRAM
Normal Read Bus Cycle:
PRE + ACT + READ
Commands, Burst
(RASD = 1, RCD[1:0] =
01, TPC[2:0] = 001,
CAS Latency = 3)
Figure 22.27
Synchronous DRAM
Normal Read Bus Cycle:
READ Command, Burst
(RASD = 1, CAS
Latency = 3)
Figure 22.30
Synchronous DRAM
Normal Write Bus Cycle:
ACT + WRITE
Commands, Burst
(RASD = 1, RCD[1:0] =
01, TRWL[2:0] = 010)
Figure 22.31
Synchronous DRAM
Normal Write Bus Cycle:
PRE + ACT + WRITE
Commands, Burst
(RASD = 1, RCD[1:0] =
01, TPC[2:0] = 001,
TRWL[2:0] = 010)
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Revision (See Manual for Details)
Title amended
Title amended
Title amended
Title amended
Title amended
Rev.7.00 Oct. 10, 2008 Page xxxix of lxxxiv
REJ09B0366-0700

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