HD6417750SBP200 Renesas Electronics America, HD6417750SBP200 Datasheet - Page 550

IC SUPERH MPU ROMLESS 256BGA

HD6417750SBP200

Manufacturer Part Number
HD6417750SBP200
Description
IC SUPERH MPU ROMLESS 256BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7750r
Datasheet

Specifications of HD6417750SBP200

Core Processor
SH-4
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, FIFO, SCI, SmartCard
Peripherals
DMA, POR, WDT
Number Of I /o
28
Program Memory Type
ROMless
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 2.07 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417750SBP200
Manufacturer:
HITACHI
0
Part Number:
HD6417750SBP200
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Section 13 Bus State Controller (BSC)
Power-On Sequence: Regarding use of DRAM after powering on, it is requested that a wait time
(at least 100 μs or 200 μs) during which no access can be performed be provided, followed by at
least the prescribed number (usually 8) of dummy CAS-before-RAS refresh cycles. As the bus
state controller does not perform any special operations for a power-on reset, the necessary power-
on sequence must be carried out by the initialization program executed after a power-on reset.
Rev.7.00 Oct. 10, 2008 Page 464 of 1074
REJ09B0366-0700
CKIO
A25–A0
CSn
RD/WR
RAS
CAS
D63–D0
BS
TRr1
TRr2
Figure 13.25 DRAM Self-Refresh Cycle Timing
TRr3
TRr4
TRr5
Trc
Trc
Trc

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