KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 82

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
3.10.3
After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined
with address of each block.
If a failed address is identified, it must be managed in firmware.
Multi Block Erase/ Multi Block Erase Verify Read Flow Chart
Write ’DFS
Write 0 to interrupt register
Add: F100h DQ=DFS, FBA
Add: F241h DQ=[15]=INT
Write ’Multi Block Erase’
Add: F220h DQ=0095h
Add: F241h DQ=0000h
low to high transition
Wait for INT register
Final Multi Block
Command
Note 1) DFS should be a fixed value, for Multi Block Erase is performed within a single chip.
Erase?
1)
Start
, FBA’ of Flash
Multi-Block Erase Verify Read Operation
YES
NO
Write 0 to interrupt register
Write 0 to interrupt register
Add: F241h DQ=[15]=INT
Add: F241h DQ=[15]=INT
Write ’Multi Block Erase
Verify Read Command’
Add: F241h DQ=0000h
Add: F220h DQ=0094h
Add: F241h DQ=0000h
Add: F220h DQ=0071h
low to high transition
Add: F100h DQ=FBA
low to high transition
Add: F100h DQ=FBA
Write ’FBA’ of Flash
Wait for INT register
Wait for INT register
Write ’FBA’ of Flash
Write ’Block Erase
Command’
82
NO
Multi Block Erase completed
Add: F240h DQ[10]=Error
FLASH MEMORY
Erase completed
Read Controller
Final Multi Block
Status Register
Erase Address?
Multi Block Erase Verify Read
DQ[10]=0?
*DFS is for DDP
YES
YES
Erase Error
NO