KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 114
![no-image](/images/no-image-200.jpg)
KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 114 of 124
- Download datasheet (2Mb)
MuxOneNAND
MuxOneNAND
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.12
6.13
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.3V. RP pin provides hardware protection and is recommended to be kept at V
before power-down.
Operation
Operation
ADQi
AVD
V
INT
RDY
bit
RP
CC
WE
INT
CE
OE
bit
Data Protection Timing During Power Down
NAND Flash Core Reset Timing
High-Z
F220h
Operation or Idle
MuxOneNAND Reset
00F0h
114
Idle
NAND Flash Core reset
t
Ready
typ. 1.3V
2
NAND Write
Protected
FLASH MEMORY
Idle
0V
IL
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