KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 33

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KFM2G16Q2M-DEB5

Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.7.2
The figure below shows the assignment of the spare area in the Internal Memory NAND Array.
Spare Area Assignment in the Internal Memory NAND Array Information
Word
1
2
3
4
5
6
7
8
LSB
Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3
LSB
Internal Memory Spare Area Assignment
1
st
W
MSB
Byte
MSB
MSB
MSB
MSB
MSB
MSB
MSB
MSB
LSB
LSB
LSB
LSB
LSB
LSB
LSB
LSB
MSB
LSB
Main area
256W
2
nd
W
MSB
Main area
Note
256W
1
2
3
3
4
LSB
3
rd
W
MSB
Main area
256W
LSB
Invalid Block information in 1st and 2nd page of an invalid block
Managed by internal ECC logic for Logical Sector Number data
4
th
Main area
W
256W
MSB
33
Dedicated to internal ECC logic. Read Only.
Dedicated to internal ECC logic. Read Only.
Dedicated to internal ECC logic. Read Only.
Dedicated to internal ECC logic. Read Only.
Dedicated to internal ECC logic. Read Only.
ECCs 2nd for 3rd word of spare area data
ECCs 1st for 2nd word of spare area data
ECCm
LSB
1st
Spare
area
8W
5
ECCm 2nd for main area data
th
ECCm 3rd for main area data
ECCm 1st for main area data
W
ECCm
Reserved for future use
2nd
MSB
Reserved for future use
Spare
Available to the user
area
8W
Description
ECCm
LSB
3rd
Spare
area
8W
6
th
W
ECCs
MSB
1st
Spare
area
8W
FLASH MEMORY
ECCs
LSB
2nd
7
th
Note3
W
MSB
Note4 Note4
LSB
8
th
W
MSB

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