KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 109

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
NOTES:
1. AA = Address of address register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
6.7
A/DQ15
A/DQ0:
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to write the data
BD = Program Data
SA = Address of status register
RDY
AVD
CLK
WE
INT
OE
CE
bit
V
Hi-Z
IL
Program Operation Timing
See AC Characteristics Tables 5.7 and 5.8
t
t
t
AAVDS
AVDP
CS
AA
t
CER
t
WPL
Program Command Sequence (last two cycles)
t
PMA
AAVDH
t
WC
t
t
WPH
WEA
BA
BD
CA
t
DS
PCD
t
CH
109
t
DH
t
CEZ
t
CER
t
PGM
SA
Read Status Data
Progress
In
FLASH MEMORY
SA
Completed
t
CEZ