KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 50

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Burst Length (BL) Information[11:9]
Burst Length (BL)
Error Correction Code (ECC) Information[8]
RDY Polarity (RDYpol) Information[7]
INT Polarity (INTpol) Information[6]
Item
BL
1 (default)
101~111
RDYpol
INTpol
ECC
Item
Item
000
001
010
100
011
BL
0
Burst Length
Definition
INT bit of Interrupt Status Register
Error Correction Code Operation
Burst Length(Main)
RDY signal polarity
Definition
Definition
32 words
1 (ready)
1 (ready)
0 (busy)
0 (busy)
50
Specifies the size of the burst length during a synchronous
Continuous(default)
read, wrap around and linear burst read
Reserved
16 words
4 words
8 words
1 = without correction (bypassed)
Description
0 = with correction (default)
1 = high for ready (default)
FLASH MEMORY
Burst Length(Spare)
0 = low for ready
INT Pin output
Description
Description
High
High
Low
Low
N/A