KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 106

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

6.4
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.3
A/DQ15
A/DQ0:
A/DQ15
A/DQ0:
AVD
RDY
RDY
WE
AVD
CE
OE
WE
NOTE: VA=Valid Read Address, RD=Read Data.
NOTE: VA=Valid Read Address, RD=Read Data.
OE
CE
Hi-Z
Hi-Z
See timing diagram 6.14, 6.15 for tASO
See timing diagram 6.14, 6.15 for tASO
Asynchronous Read
Asynchronous Read
See AC Characteristics Table 5.5
See AC Characteristics Table 5.5
t
WEA
t
CER
t
WEA
t
t
OEH
t
AAVDS
OEH
t
AAVDS
t
AVDO
t
CER
t
CA
t
VA
CA
t
AAVDH
t
VA
AA
t
t
ACC
t
AVDP
t
CE
AVDP
t
OE
(VA Transition After AVD Low)
t
(VA Transition Before AVD Low)
OE
t
t
AAVDH
AVDO
106
t
t
t
CE
RC
RC
Valid RD
Valid RD
t
OEZ
t
t
OEZ
CEZ
FLASH MEMORY
t
CEZ
Hi-Z
Hi-Z
Hi-Z
Hi-Z