KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 110

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
NOTES:
1. AA = Address of address register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
6.8
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
A/DQ15
A/DQ0:
AVD
CLK
RDY
WE
INT
OE
CE
bit
Block Erase Operation Timing
V
Hi-Z
IL
See AC Characteristics Tables 5.7 and 5.8
t
t
t
AVDP
AAVDS
CS
AA
t
CER
t
WPL
Program Command Sequence (last two cycles)
t
AAVDH
PMA
t
WC
t
t
WPH
WEA
BA
BD
CA
t
DS
PCD
t
CH
110
t
DH
t
CEZ
t
CER
t
PGM
SA
Read Status Data
Progress
In
FLASH MEMORY
SA
Completed
t
CEZ