KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 115

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

6.15
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.14
A/DQ15
A/DQ15
A/DQ0:
A/DQ0:
RDY
RDY
AVD
AVD
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
WE
WE
OE
OE
CE
CE
2)
2)
Hi-Z
t
t
t
Toggle Bit Timing in Asynchronous Read
(VA Transition After AVD Low)
AAVDS
Toggle Bit Timing in Asynchronous Read
(VA Transition Before AVD Low)
CER
AAVDS
t
t
CER
t
AVDO
CA
See AC Characteristics Table 5.5
See AC Characteristics Table 5.5
t
ASO
VA
t
CA
1)
t
t
ASO
AA
t
VA
t
AVDP
CE
t
t
1)
t
ACC
OE
AVDP
t
AAVDH
t
t
AVDO
OE
t
AAVDH
t
RC
t
t
CE
RC
Status RD
Status RD
1)
1)
t
OEZ
t
CEZ
t
OEZ
t
115
CEZ
Hi-Z
t
CA
Hi-Z
VA
VA
FLASH MEMORY
Status RD
Status RD
Hi-Z
Hi-Z
Hi-Z