KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 121

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
Internal Vcc
~50k ohm
INT
INT pol = ’Low’
Rp
Ibusy
tf[us]
tr[ns]
Ibusy
tr[ns]
tf[us]
0.067
0.122
10.73
1.75
6.49
1.75
1K
1K
Ready
121
Vss
KFN2G16Q2M @ Vcc = 1.8V, Ta = 25
0.586
10K
0.944
10.73
0.18
6.49
0.18
10K
@ Vcc = 1.8V, Ta = 25
tr
VOH
20K
1.507
10.73
0.09
1.02
6.49
0.09
20K
Rp(ohm)
Rp(ohm)
Busy State
1.356
30K
1.883
10.73
0.06
6.49
0.06
30K
Vcc
FLASH MEMORY
°C , C
1.623
0.045
40K
2.153
0.045
10.73
6.49
40K
L
= 30pF
VOL
°C , C
tf
6.49
10.73
0.036
50K
2.356
1.84
0.036
50K
L
= 30pF
Open(100K)
Open(100K)
0.000
2.912
4.05
0.000