KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 116

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KFM2G16Q2M-DEB5

Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
NOTE :
1. VA = Valid Address. When the Internal Routine operation is complete, the toggle bits will stop toggling.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
6.16
A/DQ15
A/DQ0:
RDY
CLK
AVD
OE
CE
2)
Hi-Z
t
ACS
t
t
CES
ACH
Toggle Bit Timing in Synchronous Read Mode
VA
1)
t
AAVDS
t
AAVDH
t
IAA
Status Data
t
RDYS
116
VA
t
FLASH MEMORY
AVDO
Status Data

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