KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 44

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.8.9
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
Start Address1 Information
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
Start Address2 Information
DBS
DFS
15
15
Register Information
Register Information
14
14
Start Address1 Register F100h (R/W)
FBA
DFS
DBS
2Gb DDP
Device
13
13
1Gb
Reserved(00000)
12
12
CE
11
11
10
10
DBS
DBS
DFS
DFS
CE
CE
9
9
Reserved(000000000000000)
DDP_OPT
GND
V
DDP_OPT
Number of Block
DD
Comp
Comp
Comp
Comp
Flash Core of DDP (Device Flash Core Select)
8
BufferRAM of DDP (Device BufferRAM Select)
8
2048
1024
CHIP 1
CHIP 2
44
7
7
NAND Flash Block Address
BUFFER
BUFFER
6
6
Description
Description
FLASH
FLASH
SRAM
CORE
SRAM
CORE
INT
INT
5
5
FBA
4
4
INT
FLASH MEMORY
DFS[15] & FBA[9:0]
3
3
FBA[9:0]
FBA
2
2
1
1
0
0