KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 7
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KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 7 of 124
- Download datasheet (2Mb)
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
1.5
Device Architecture
Device Performance
System Hardware
Packaging
• Reliable CMOS Floating-Gate Technology
• Design Technology:
• Supply Voltage:
• Host Interface:
• 5KB Internal BufferRAM:
• SLC NAND Array:
• Host Interface Type:
• Programmable Burst Read Latency
• Multiple Sector Read:
• Multiple Reset Modes:
• Multi Block Erase
• Low Power Dissipation:
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (/RP)
• Data Protection Modes
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature
• Detailed chip information
• 1G products
• 2G DDP products
Product Features
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
90nm
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Synchronous Burst Read
Asynchronous Random Read
Asynchronous Random Write
Latency 3(up to 40MHz), 4, 5, 6, and 7
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Resets
up to 64 Blocks
Typical Power,
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 11mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA (TBD)
- Up to 54MHz clock frequency
- Linear Burst 4-, 8-, 16, 32-words with wrap around
- Continuous 1K word Sequential Burst
- Standby current : 10uA
- Synchronous Burst Read current(54MHz) : 12mA
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- 76ns access time
7
FLASH MEMORY
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