KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Density Part No. 1Gb KFM1G16Q2M-DEB5 2Gb KFN2G16Q2M-DEB5 MuxOneNAND Specification TM V (core & IO) Temperature CC 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Version: Ver. 1.0 Date: May 17th, 2005 1 FLASH MEMORY PKG Extended 63FBGA(LF) Extended 63FBGA(LF) ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Company MuxOneNAND Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the MuxOneNAND device. Section 3.0 provides information about device operation. Electrical ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 1.1 Revision History Document Title MuxOneNAND Revision History Revision No. History 0.0 Initial issue. 0.1 1. Corrected the errata 2. Added Data Protection Scheme during Power-down 3. ECC description is revised. 4. Added Read while Load and Write ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Revision History Revision No. History 0.4 1. Corrected the errata 2. Updated DC parameters to RMS Values 3. Revised Warm Reset Timing Diagram 4. Added INT Capacitance Information 5. Added Speed Information Ordering Information 6. Added Booting Sequence ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 1.2 Flash Product Type Selector Samsung offers a variety of Flash solutions including NAND Flash, MuxOneNAND both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. To determine which Samsung Flash product solution is ...

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... When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor- mance, small footprint solution. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 1.5 Product Features Device Architecture • Design Technology: • Supply Voltage: • Host Interface: • 5KB Internal BufferRAM: • SLC NAND Array: Device Performance • Host Interface Type: • Programmable Burst Read Latency • Multiple Sector Read: • ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 1.6 General Overview ™ MuxOneNAND ‚ monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes con- trol logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.0 DEVICE DESCRIPTION 2.1 Detailed Product Description The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated ECC Written ECC BufferRAM BootRAM DataRAM Sector Possible data unit to be read from memory to BufferRAM programmed to memory. Data unit ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.3 Pin Configuration 2.3.1 1Gb Product / 2Gb Product (KFM1G16Q2M/KFN2G16Q2M Single Chip : 63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA DDP : 63ball, 11mm x 13mm ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.4 Pin Description Pin Name Type Host Interface Multiplexed Address/Data bus - Inputs for addresses during read operation, which are for addressing BufferRAM & Register. ADQ15~ADQ0 I/O - Inputs data during program and commands for all operations, outputs ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.5 Block Diagram ADQ15~ADQ0 CLK AVD INT RDY 2.6 Memory Array Organization The MuxOneNAND architecture integrates several memory areas on a single chip. 2.6.1 Internal (NAND Array) Memory Organization The on-chip internal memory is ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Internal Memory Array Information Area Main Spare Internal Memory Array Organization Main Area Main Area 512B Sector0 512B Sector1 Main Area 2KB Page0 2KB Page63 Block Page 128KB 2KB 4KB 64B Sector 512B Page 512B Sector3 512B Sector2 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.6.2 External (BufferRAM) Memory Organization The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering. The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) External Memory Array Organization BootRAM DataRAM0 DataRAM1 FLASH MEMORY Main area data Spare area data (512B) (16B) BootRAM 0 BootRAM 1 DataRAM 0_0 DataRAM 0_1 DataRAM 0_2 DataRAM 0_3 DataRAM 1_0 DataRAM 1_1 DataRAM 1_2 DataRAM 1_3 16 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.7 Memory Map The following tables are the memory maps for the MuxOneNAND. 2.7.1 Internal (NAND Array) Memory Organization The following tables show the Internal Memory address map in word order. Page and Sector Block Block Address Address ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block64 0040h 0000h~00FFh Block65 0041h 0000h~00FFh Block66 0042h 0000h~00FFh Block67 0043h 0000h~00FFh Block68 0044h 0000h~00FFh Block69 0045h 0000h~00FFh Block70 0046h 0000h~00FFh Block71 0047h 0000h~00FFh Block72 0048h 0000h~00FFh Block73 0049h 0000h~00FFh Block74 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block128 0080h 0000h~00FFh Block129 0081h 0000h~00FFh Block130 0082h 0000h~00FFh Block131 0083h 0000h~00FFh Block132 0084h 0000h~00FFh Block133 0085h 0000h~00FFh Block134 0086h 0000h~00FFh Block135 0087h 0000h~00FFh Block136 0088h 0000h~00FFh Block137 0089h 0000h~00FFh Block138 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block192 00C0h 0000h~00FFh Block193 00C1h 0000h~00FFh Block194 00C2h 0000h~00FFh Block195 00C3h 0000h~00FFh Block196 00C4h 0000h~00FFh Block197 00C5h 0000h~00FFh Block198 00C6h 0000h~00FFh Block199 00C7h 0000h~00FFh Block200 00C8h 0000h~00FFh Block201 00C9h 0000h~00FFh Block202 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block256 0100h 0000h~00FFh Block257 0101h 0000h~00FFh Block258 0102h 0000h~00FFh Block259 0103h 0000h~00FFh Block260 0104h 0000h~00FFh Block261 0105h 0000h~00FFh Block262 0106h 0000h~00FFh Block263 0107h 0000h~00FFh Block264 0108h 0000h~00FFh Block265 0109h 0000h~00FFh Block266 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block320 0140h 0000h~00FFh Block321 0141h 0000h~00FFh Block322 0142h 0000h~00FFh Block323 0143h 0000h~00FFh Block324 0144h 0000h~00FFh Block325 0145h 0000h~00FFh Block326 0146h 0000h~00FFh Block327 0147h 0000h~00FFh Block328 0148h 0000h~00FFh Block329 0149h 0000h~00FFh Block330 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block384 0180h 0000h~00FFh Block385 0181h 0000h~00FFh Block386 0182h 0000h~00FFh Block387 0183h 0000h~00FFh Block388 0184h 0000h~00FFh Block389 0185h 0000h~00FFh Block390 0186h 0000h~00FFh Block391 0187h 0000h~00FFh Block392 0188h 0000h~00FFh Block393 0189h 0000h~00FFh Block394 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block448 01C0h 0000h~00FFh Block449 01C1h 0000h~00FFh Block450 01C2h 0000h~00FFh Block451 01C3h 0000h~00FFh Block452 01C4h 0000h~00FFh Block453 01C5h 0000h~00FFh Block454 01C6h 0000h~00FFh Block455 01C7h 0000h~00FFh Block456 01C8h 0000h~00FFh Block457 01C9h 0000h~00FFh Block458 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block512 0200h 0000h~00FFh Block513 0201h 0000h~00FFh Block514 0202h 0000h~00FFh Block515 0203h 0000h~00FFh Block516 0204h 0000h~00FFh Block517 0205h 0000h~00FFh Block518 0206h 0000h~00FFh Block519 0207h 0000h~00FFh Block520 0208h 0000h~00FFh Block521 0209h 0000h~00FFh Block522 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block576 0240h 0000h~00FFh Block577 0241h 0000h~00FFh Block578 0242h 0000h~00FFh Block579 0243h 0000h~00FFh Block580 0244h 0000h~00FFh Block581 0245h 0000h~00FFh Block582 0246h 0000h~00FFh Block583 0247h 0000h~00FFh Block584 0248h 0000h~00FFh Block585 0249h 0000h~00FFh Block586 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block640 0280h 0000h~00FFh Block641 0281h 0000h~00FFh Block642 0282h 0000h~00FFh Block643 0283h 0000h~00FFh Block644 0284h 0000h~00FFh Block645 0285h 0000h~00FFh Block646 0286h 0000h~00FFh Block647 0287h 0000h~00FFh Block648 0288h 0000h~00FFh Block649 0289h 0000h~00FFh Block650 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block704 02C0h 0000h~00FFh Block705 02C1h 0000h~00FFh Block706 02C2h 0000h~00FFh Block707 02C3h 0000h~00FFh Block708 02C4h 0000h~00FFh Block709 02C5h 0000h~00FFh Block710 02C6h 0000h~00FFh Block711 02C7h 0000h~00FFh Block712 02C8h 0000h~00FFh Block713 02C9h 0000h~00FFh Block714 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block768 0300h 0000h~00FFh Block769 0301h 0000h~00FFh Block770 0302h 0000h~00FFh Block771 0303h 0000h~00FFh Block772 0304h 0000h~00FFh Block773 0305h 0000h~00FFh Block774 0306h 0000h~00FFh Block775 0307h 0000h~00FFh Block776 0308h 0000h~00FFh Block777 0309h 0000h~00FFh Block778 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block832 0340h 0000h~00FFh Block833 0341h 0000h~00FFh Block834 0342h 0000h~00FFh Block835 0343h 0000h~00FFh Block836 0344h 0000h~00FFh Block837 0345h 0000h~00FFh Block838 0346h 0000h~00FFh Block839 0347h 0000h~00FFh Block840 0348h 0000h~00FFh Block841 0349h 0000h~00FFh Block842 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block896 0380h 0000h~00FFh Block897 0381h 0000h~00FFh Block898 0382h 0000h~00FFh Block899 0383h 0000h~00FFh Block900 0384h 0000h~00FFh Block901 0385h 0000h~00FFh Block902 0386h 0000h~00FFh Block903 0387h 0000h~00FFh Block904 0388h 0000h~00FFh Block905 0389h 0000h~00FFh Block906 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Page and Sector Block Block Address Address Block960 03C0h 0000h~00FFh Block961 03C1h 0000h~00FFh Block962 03C2h 0000h~00FFh Block963 03C3h 0000h~00FFh Block964 03C4h 0000h~00FFh Block965 03C5h 0000h~00FFh Block966 03C6h 0000h~00FFh Block967 03C7h 0000h~00FFh Block968 03C8h 0000h~00FFh Block969 03C9h 0000h~00FFh Block970 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.7.2 Internal Memory Spare Area Assignment The figure below shows the assignment of the spare area in the Internal Memory NAND Array. Main area Main area 256W 256W Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3 LSB MSB ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.7.3 External Memory (BufferRAM) Address Map The following table shows the External Memory address map in Word and Byte Order. Note that the data output is unknown while host reads a register bit of reserved area. Address Address ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.7.4 External Memory Map Detail Information The tables below show Word Order Address Map information for the BootRAM and DataRAM main and spare areas. • BootRAM(Main area) -0000h~01FFh: 2(sector) x 512byte(NAND main area) = 1KB 0000h~00FFh(512B) BootM 0 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.7.5 External Memory Spare Area Assignment Word Byte Buf. F Address Address BootS 0 8000h 10000h 8001h 10002h 8002h 10004h 8003h 10006h 8004h 10008h ECC Code for Main area data (2 8005h 1000Ah ECC Code for Spare area ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Word Byte Buf. F Address Address DataS 0_2 8020h 10040h 8021h 10042h 8022h 10044h 8023h 10046h 8024h 10048h ECC Code for Main area data (2 8025h 1004Ah ECC Code for Spare area data (1 8026h 1004Ch 8027h 1004Eh ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Word Byte Buf. F Address Address DataS 1_3 8048h 10090h 8049h 10092h 804Ah 10094h 804Bh 10096h 804Ch 10098h ECC Code for Main area data (2 804Dh 1009Ah ECC Code for Spare area data (1 804Eh 1009Ch 804Fh 1009Eh ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8 Registers Section 2.8 of this specification provides information about the MuxOneNAND1G registers. 2.8.1 Register Address Map This map describes the register addresses, register name, register description, and host accessibility. Address Address (word order) (byte order) F000h 1E000h ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Address Address (word order) (byte order) F24Dh 1E49Ah F24Eh 1E49Ch F24Fh~FEFFh 1E49Eh~1FDFEh FF00h 1FE00h FF01h 1FE02h FF02h 1FE04h FF03h 1FE06h FF04h 1FE08h FF05h 1FE0Ah FF06h 1FE0Ch FF07h 1FE0Eh FF08h 1FE10h FF09h~FFFFh 1FE12h~1FFFEh 2.8.2 Manufacturer ID Register F000h (R) ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.3 Device ID Register F001h (R) This Read register describes the device. F001h, see table for default Device Identification Device Identification DeviceID [1:0] Vcc DeviceID [2] Muxed/Demuxed DeviceID [3] Single/DPP DeviceID [6:4] Density ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.4 Version ID Register F002h This register is reserved for future use. 2.8.5 Data Buffer Size Register F003h (R) This Read register describes the size of the Data Buffer. F003h, default = 0800h ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.6 Boot Buffer Size Register F004h (R) This Read register describes the size of the Boot Buffer. F004h, default = 0200h Register Information BootBufSize 2.8.7 Number of Buffers Register F005h (R) This Read ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.9 Start Address1 Register F100h (R/W) This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased. F100h, default = 0000h DFS Reserved(00000) Device 2Gb DDP 1Gb Start ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.11 Start Address3 Register F102h (R/W) This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. F102h, default = 0000h Reserved(000000) Device 1Gb Start Address3 Information Register ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.13 Start Address5 Register F104h This register is reserved for future use. 2.8.14 Start Address6 Register F105h This register is reserved for future use. 2.8.15 Start Address7 Register F106h This register is reserved for future use. 2.8.16 Start ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.17 Start Buffer Register F200h (R/W) This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA). The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.18 Command Register F220h (R/W) This Read/Write register describes the operation of the MuxOneNAND interface. Note that all commands should be issued right after INT is turned from ready state to busy state. (i.e. right after 0 is ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.19 System Configuration 1 Register F221h (R, R/W) This Read/Write register describes the system configuration. F221h, default = 40C0h R/W R/W R/W RM BRL Read Mode (RM Read Mode Information[15] ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Burst Length (BL) BL 000 001 010 011 100 101~111 Burst Length (BL) Information[11:9] Item BL Error Correction Code (ECC) Information[8] Item ECC RDY Polarity (RDYpol) Information[7] Item RDYpol INT Polarity (INTpol) Information[6] INTpol 0 1 (default) Burst ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) I/O Buffer Enable (IOBE) IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid after IOBE is set to "1". IOBE can ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.20 System Configuration 2 Register F222h This register is reserved for future use. 2.8.21 Controller Status Register F240h (R) This Read register shows the overall internal status of the MuxOneNAND and the controller. F240h, default = 0000h 15 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Program This bit shows the Program Operation status. Program Information[12] Item Prog Program Operation status Erase This bit shows the Erase Operation status. Erase Information[11] Item Erase Erase Operation status Error This bit shows the overall Error status, ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Reset / Busy (RSTB) This bit shows the Reset Operation status. RSTB Information[7] Item RSTB OTP Lock Status (OTP ) L This bit shows whether the OTP block is locked or unlocked. Locking the OTP has the effect ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Controller Status Register Output Modes Mode OnGo Lock Load Load Ongoing 1 0 Program Ongoing 1 0 Erase Ongoing 1 0 Reset Ongoing 1 0 Multi-Block Erase 1 0 Ongoing Erase Verify Read 1 0 Ongoing Load OK ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.22 Interrupt Status Register F241h (R/W) This Read/Write register shows status of the MuxOneNAND interrupts. F241h, defaults = 8080h after Cold Reset; 8010h after Warm/Hot Reset INT Reserved(0000000) Interrupt (INT) This is the ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Erase Interrupt (EI) This is the Erase interrupt bit. EI Interrupt [5] Status Conditions At the completion of an Erase Operation sets itself to ’1’ (0094h, 0095h, 0030h) ’0’ is written to this bit, or clears to ’0’ ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.24 End Block Address Register F24Dh This register is reserved for future use. 2.8.25 NAND Flash Write Protection Status Register F24Eh (R) This Read register shows the Write Protection Status of the NAND Flash memory array. To read ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) ECC Information[15:0] Item Definition 1st selected sector of ERm0 the main BufferRAM 2nd selected sector of ERm1 the main BufferRAM 3rd selected sector of ERm2 the main BufferRAM 4th selected sector of ERm3 the main BufferRAM 1st selected ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.29 ECC Result of 2 Register FF03h (R) This Read register shows the Error Correction result for the 2nd selected sector of the main area data. ECCposWord1 is the error position address in the Main Area data of ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 2.8.33 ECC Result of 4 Register FF07h (R) This Read register shows the Error Correction result for the 4th selected sector of the main area data. ECCposWord3 is the error position address in the Main Area data of ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.0 DEVICE OPERATION This section of the datasheet discusses the operation of the MuxOneNAND device followed by AC/DC Characteristics and Timing Diagrams which may be consulted for further information. The MuxOneNAND supports a limited command-based interface ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.1.1 Reading Data From Buffer The buffer memory can be read by addressing a Read to the desired buffer area. 3.1.2 Writing Data to Buffer The buffer memory can be written to by addressing a Write to a ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.2 Device Bus Operation The device bus operations are shown in the table below. Operation CE Standby H Warm Reset X Asynchronous Write L Asynchronous Read L Load Initial Burst Address L Burst Read L Terminate Burst Read ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.3 Reset Mode Operation The One NAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Array Reset. Section 3.3 discusses the operation of these reset modes. The Register Reset Table shows the which registers are affected by ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.3.1 Cold Reset Mode Operation See Timing Diagram 6.9 At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset signal. This triggers bootcode loading. Bootcode loading means ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.4 Write Protection Operation The MuxOneNAND can be write-protected to prevent re-programming or erasure of data. The areas of write-protection are the BootRAM, and the NAND Flash Array. 3.4.1 BootRAM Write Protection Operation At system power-up, voltage detector ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.4.3.1 Unlocked NAND Array Write Protection State An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using the appropriate software command. (locked-tight state can be achieved ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.4.3.3 Locked-tight NAND Array Write Protection State A block that locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command sequences will not affect its state. ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Data Protection Operation Flow Diagram Note) Samsung strongly recommends to follow the above flow chart Start Write ’DFS*, SBA’ of Flash Add: F24Ch DQ=DFS*, SBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’lock/unlock/lock-tight’ Command Add: F220h ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.5 Data Protection During Power Down Operation See Timing Diagram 6.13 The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below POR level, about ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.7 Read Operation See Timing Diagrams 6.1, 6.2, 6.3 and 6.4 The device has two read modes; Asynchronous Read and Synchronous Burst Read. The initial state machine automatically sets the device into the Asynchronous Read Mode (RM=0) to ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.7.2.1 Continuous Linear Burst Read Operation See Timing Diagram 6.2 First Clock Cycle The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.7.2.3 Programmable Burst Read Latency Operation See Timing Diagrams 6.1 and 6.2 Upon power up, the number of initial clock cycles from Valid Address (/AVD) to initial data defaults to four clocks. The number of clock cycles (n) ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.7.4 Output Disable Mode Operation When the /CE or /OE input output from the device is disabled. IH The outputs are placed in the high impedance state. 3.8 Program Operation See Timing Diagram 6.7 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Program Operation Flow Diagram Start 1) Select DataRAM for DDP Add: F101h DQ=DBS* 2) Write Data into DataRAM ADD: DP DQ=Data-in NO Data Input Completed? YES Write ’DFS*, FBA’ of Flash Add: F100h DQ=DFS*’, FBA Write ’FPA, FSA’ ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.9 Copy-Back Program Operation The Copy-Back program is configured to quickly rewrite data stored in one page without utilizing memory other than MuxOneNAND. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) The Copy-Back steps shown in the flow chart are: • Data is read from the NAND Array using Flash Block Address (FBA), Flash Page Address (FPA) and Flash Sector Address (FSA). FBA, FPA, and FSA identify the source ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.9.1 Copy-Back Program Operation with Random Data Input The Copy-Back Program Operation with Random Data Input in MuxOneNAND consists of 2 phase, Load data into DataRAM, Modify data and program into designated page. Data from the source page ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.10 Erase Operation There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase. 3.10.1 Block Erase Operation See Timing Diagram 6.8 The device can be erased one block at a time. To ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) In order to perform the Internal Erase Routine, the following command sequence is necessary. • The Host selects Flash Core of DDP chip. • The Host sets the block address of the memory location. • The Erase Command ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.10.3 Multi-Block Erase Verify Read Operation After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined with address of each block failed address is identified, it must be ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.10.4 Erase Suspend / Erase Resume Operation The Erase Suspend/Erase Resume Commands interrupt and restart a Block Erase or Multi-Block Erase operation so that user may perform another urgent operation on the block that is not being designated ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Erase Resume When the Erase Resume command is executed, the Block Erase will restart. The Erase Resume operation does not actually resume the erase, but starts it again from the beginning. When an Erase Suspend or Erase Resume ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) OTP Area Structure Sector(main area):512B One Block: 64pages 128KB+4KB FLASH MEMORY Page:2KB+64B Sector(spare area):16B Manufacturer Area : 54pages page 10 to page 63 User Area : 10pages page 0 to page 9 85 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.11.1 OTP Load Operation An OTP Load Operation accesses the OTP area and transfers identified content from the OTP to the DataRAM on-chip buffer, thus making the OTP contents available to the Host. The OTP area is a ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.11.2 OTP Program Operation An OTP Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated page(s) of the OTP. A memory location in the OTP area can be programmed only ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) OTP Program Operation Flow Chart Start 1) Write ’DFS*, FBA’ of Flash Add: F100h DQ=DFS*’, FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’OTP Access’ Command Add: F220h DQ=0065h Wait for INT register low to high ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.11.3 OTP Lock Operation Even though the OTP area can only be programmed once without erase capability, it can be locked when the device starts up to pre- vent any changes from being made. Unlike the main area ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) OTP Lock Operation Flow Chart Start Write ’DFS’, ’FBA’ of Flash Add: F100h DQ=DFS, FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’OTP Access’ Command Add: F220h DQ=0065h Wait for INT register low to high transition ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.12 Dual Operations The device has independent dual data buffers on-chip (except during the Boot Load period) that enables higher performance read and program operation. 3.12.1 Read-While-Load Operation This operation accelerates the read performance of the device by ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY 92 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY 93 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.13 DQ6 Toggle Bit The MuxOneNAND device has DQ6 Toggle bit. Toggle bit is another option to detect whether an internal load operation is in progress or completed. Once the BufferRAM(BootRAM, DataRAM0, DataRAM1 busy state ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.14 ECC Operation The MuxOneNAND device has on-chip ECC with the capability of detecting 2 bit errors and correcting 1-bit errors in the NAND Flash Array memory main and spare areas. As the device transfers data from a ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 3.15 Invalid Block Operation Invalid blocks are defined as blocks in the device's NAND Flash Array memory that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Invalid Block Table Creation Flow Chart Increment Block Address Create (or update) Invalid Block(s) Table 3.15.2 Invalid Block Replacement Operation Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Referring to the diagram for further illustration, when an error happens in the nth page of block 'A' during program operation, copy the data in the 1st ~ (n-1)th page to the same location of block 'B' via ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings Parameter Voltage on any pin relative Temperature Under Bias Storage Temperature Short Circuit Output Current Recommended Operating Temperature NOTES: 1. Minimum DC voltage is -0.5V on Input/ Output ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 4.3 DC Characteristics Parameter Symbol Input Leakage Current I Output Leakage Current I LO Active Asynchronous Read Current I CC1 (Note 2) Active Burst Read Current (Note 2) I CC2 Active Write Current (Note 2) I CC3 Active ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 5.0 AC CHARACTERISTICS 5.1 AC Test Conditions Parameter Input Pulse Levels CLK Input Rise and Fall Times other inputs Input and Output Timing Levels Output Load V CC Input & Output Test Point 0V Input ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 5.4 AC Characteristics for Synchronous Burst Read See Timing Diagrams 6.1, 6.2 and 6.16 Parameter Clock Clock Cycle Initial Access Time Burst Access Time Valid Clock to Output Delay AVD Setup Time to CLK AVD Hold Time from ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 5.5 AC Characteristics for Asynchronous Read See Timing Diagrams 6.3, 6.4, 6.14 and 6.15 Parameter Access Time from CE Low Asynchronous Access Time from AVD Low Asynchronous Access Time from address valid Read Cycle Time AVD Low Time ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 5.7 AC Characteristics for Asynchronous Write/Load/ Program/Erase Operation See Timing Diagrams 6.5, 6.6, 6.7, and 6.8 Parameter WE Cycle Time AVD low pulse width Address Setup Time Address Hold Time Data Setup Time Data Hold Time CE Setup ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst Mode with Wrap Around See AC Characteristics Table 5.4 6 cycles for second access shown. BRL = CLK CES CER CER CLK t RDYO t ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.3 Asynchronous Read See AC Characteristics Table 5 OEH WE A/DQ0: A/DQ15 t AAVDS t AVD WEA Hi-Z RDY NOTE: VA=Valid Read Address, RD=Read Data. See timing diagram 6.14, 6.15 for tASO 6.4 Asynchronous Read ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.5 Asynchronous Write See AC Characteristics Table 5 CLK AAVDS AVD t AVDP ADQ15-ADQ0 Hi-Z RDY t CER WPL WPH t WEA t AAVDH VA ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.6 Load Operation Timing See AC Characteristics Tables 5.7 and 5.8 Load Command Sequence (last two cycles) t AAVDS AVD t AVDP t AAVDH AA LMA ADQ0~ CER OE t WPL ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.7 Program Operation Timing See AC Characteristics Tables 5.7 and 5.8 Program Command Sequence (last two cycles AVDP WEA AVD t AAVDS t AAVDH A/DQ0: AA PMA BA A/DQ15 WPL WE t WPH ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.8 Block Erase Operation Timing See AC Characteristics Tables 5.7 and 5.8 Program Command Sequence (last two cycles AVDP WEA AVD t AAVDS t AAVDH A/DQ0: AA PMA BA A/DQ15 WPL WE t ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.9 Cold Reset Timing POR triggering level System Power MuxOneNAND Sleep Operation RP INT INT bit IOBE bit INTpol bit Note: 1) Bootcode copy operation starts 400us later than POR activation. The system power should reach Vcc after ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.10 Warm Reset Timing CE Ready1 High-Z RDY INT bit Operation 1) Idle Reset Ongoing Status NOTES: 1. The status which can accept any register based operation(Load, Program, Erase command, etc). 2. The ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.11 Hot Reset Timing AVD BP(Note 3) ADQi or F220h INT bit High-Z RDY OneNAND Operation or Idle Operation NOTE: 1. Internal reset operation means that the device initializes internal registers and makes output signals ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.12 NAND Flash Core Reset Timing AVD ADQi F220h INT bit High-Z RDY MuxOneNAND Operation or Idle Operation 6.13 Data Protection Timing During Power Down The device is designed to offer protection from any involuntary ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.14 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low) See AC Characteristics Table 5 CER ASO t AVDO A/DQ0 A/DQ15 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 6.16 Toggle Bit Timing in Synchronous Read Mode t CES CE CLK t AAVDS AVD t AAVDH t ACS A/DQ0 A/DQ15 t ACH t IAA OE Hi-Z 2) RDY NOTE : Valid Address. ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 7.0 TECHNICAL AND APPLICATION NOTES From time-to-time supplemental technical information and application notes pertaining to the design and operation of the device in a system are included in this section. Contact your Samsung Representative to determine if additional ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Synchronous Mode Using the INT Pin When operating synchronously, INT is tied directly to a Host GPIO. Asynchronous Mode Using the INT Pin When configured to operate in an asynchronous mode, /CE and /AVD of the MuxOneNAND are ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Synchronous Mode Using Interrupt Status Register Bit Polling When operating synchronously, /CE, /AVD, CLK, /RDY, /OE, and DQ pins on the host and MuxOneNAND are tied together. Asynchronous Mode Using Interrupt Status Register Bit Polling When configured to ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 7.1.3 Determining Rp Value Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts. Internal Vcc ~50k ohm INT 1.75 Ibusy 0.089 tr[us] 3.77 tf[ns] 1K 1.75 Ibusy 0.161 ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Internal Vcc INT ~50k ohm INT pol = ’Low’ tr Ready VOH Vss Rp @ Vcc = 1.8V 1.75 Ibusy 0.18 0.09 0.586 1.02 0.067 tf[us] 6.49 6.49 6.49 tr[ns] 10K 20K 1K KFN2G16Q2M @ ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 7.2 Boot Sequence One of the best features MuxOneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader despite the fact that its core architecture is based on NAND ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) Block 512 Reservoir Reservoir File System File System Block 162 Block 162 Os Image Os Image Block 2 Block 2 NBL3 BL3 Block 1 Block 1 NBL1 BL1 NBL2 BL2 Block 0 Block 0 Reservoir File System Os ...

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MuxOneNAND1G(KFM1G16Q2M-DEB5) MuxOneNAND2G(KFN2G16Q2M-DEB5) 8.0 PACKAGE DIMENSIONS 10.00 ±0.10 #A1 TOP VIEW 11.00 ±0.10 #A1 TOP VIEW 0.10 MAX 0.80x9=7.20 (Datum (Datum 3.60 0.32 ±0.05 0.9 ±0.10 BOTTOM ...