KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 103

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

NOTE:
2. This Parameter is valid at toggle bit timing in asynchronous read only. (timing diagram 6.14 and 6.15)
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
5.5
5.6
1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by t
Note:
1. These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
2. The device may reset if tRP < tRP min(200ns), but this is not guaranteed.
Access Time from CE Low
Asynchronous Access Time from AVD Low
Asynchronous Access Time from address valid
Read Cycle Time
AVD Low Time
Address Setup to rising edge of AVD
Address Hold from rising edge of AVD
Output Enable to Output Valid
CE Setup to AVD falling edge
CE Disable to Output & RDY High Z
OE Disable to Output High Z
AVD High to OE Low
CE Low to RDY Valid
WE Disable to AVD Enable
Address to OE low
RP & Reset Command Latch to BootRAM Access
RP & Reset Command Latch(During Load Routines) to INT High (Note1)
RP & Reset Command Latch(During Program Routines) to INT High (Note1)
RP & Reset Command Latch(During Erase Routines) to INT High (Note1)
RP & Reset Command Latch(NOT During Internal Routines) to INT High (Note1)
RP Pulse Width (Note2)
If CE is disabled at the same time or before OE is disabled, the output will go to high-z by t
If CE and OE are disabled at the same time, the output will go to high-z by t
These parameters are not 100% tested.
AC Characteristics for Asynchronous Read
and NAND Flash Core Reset
See Timing Diagrams 6.10, 6.11 and 6.12
See Timing Diagrams 6.3, 6.4, 6.14 and 6.15
AC Characteristics for Warm Reset (RP), Hot Reset
Parameter
1)
Parameter
1)
Symbol
t
t
103
t
t
t
AAVDS
AAVDH
t
t
t
ASO
AVDP
t
t
AVDO
WEA
t
t
ACC
t
t
t
OEZ
CER
CEZ
RC
OE
CE
AA
CA
OEZ
2)
.
(NAND Flash Array)
(NAND Flash Array)
(NAND Flash Array)
(NAND Flash Array)
(BufferRAM)
Symbol
OEZ
CEZ
tReady1
tReady2
tReady2
tReady2
tReady2
tRP
.
.
Min
76
12
15
10
5
7
0
0
-
-
-
-
-
-
-
KFM1G16Q2M
FLASH MEMORY
Min
200
-
-
-
-
-
Max
76
76
76
20
20
17
15
-
-
-
-
-
-
-
-
Max
500
10
20
10
5
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µs
µs
µs
µs
µs
ns