KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 58

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KFM2G16Q2M-DEB5

Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.8.24 End Block Address Register F24Dh
This register is reserved for future use.
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA has to be set before reading the register
F24Eh, default = 0002h
Write Protection Status Information[2:0]
2.8.26 ECC Status Register FF00h (R)
This Read register shows the Error Correction Status. The MuxOneNAND can detect 1- or 2-bit errors and correct 1-bit errors. 3-bit or
more error detection and correction is not supported.
ECC can be performed on the NAND Flash main and spare memory areas. The ECC status register can also show the number of
errors in a sector as a result of an ECC check in during a load operation. ECC status bits are also updated during a boot loading oper-
ation.
FF00h, default = 0000h
Error Status
15
15
Item
ERm3
LTS
US
LS
14
14
13
13
Bit
ERs3
2
1
0
12
12
ERm, ERs
00
01
10
11
11
11
Locked-Tight Status
ERm2
Unlocked Status
Reserved(0000000000000)
Locked Status
Definition
10
10
9
9
ERs2
8
8
58
7
7
ERm1
1 = current NAND Flash block is locked-tight
1 = current NAND Flash block is unlocked
6
6
1 = current NAND Flash block is locked
.
2 bits error (uncorrectable)
5
5
1-bit error(correctable)
ERs1
Description
ECC Status
4
4
Reserved
No Error
FLASH MEMORY
3
3
ERm0
US
2
2
LS
1
1
ERs0
LTS
0
0

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