KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 51
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KFM2G16Q2M-DEB5
Manufacturer Part Number
KFM2G16Q2M-DEB5
Description
MuxOneNAND FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KFM2G16Q2M-DEB5.pdf
(124 pages)
- Current page: 51 of 124
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MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
RDY Configuration (RDY conf)
RDY Configuration Information[4]
Boot Buffer Write Protect Status(BWPS)
Boot Buffer Write Protect Status Information[0]
I/O Buffer Enable (IOBE)
IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid
after IOBE is set to "1". IOBE can be reset by a Cold Reset or by writing "0" to bit 5 of System Configuration1 Register.
I/O Buffer Enable Information[5]
RDY conf
BWPS
IOBE
Item
Item
Item
Boot Buffer Write Protect Status
I/O Buffer Enable for INT and
RDY configuration
Definition
Definition
RDY signals
Definition
51
1=active one clock before valid data
0=active with valid data(default)
FLASH MEMORY
0=locked(fixed)
0 = disable (default)
Description
Description
Description
1 = enable
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