KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 49

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
2.8.19 System Configuration 1 Register F221h (R, R/W)
Burst Read Latency (BRL) Information[14:12]
This Read/Write register describes the system configuration.
F221h, default = 40C0h
Read Mode (RM)
Read Mode Information[15]
Burst Read Latency (BRL)
R/W
RM
15
14
Item
BRL
Item
BRL
RM
000
001
010
011
100
101
110
RM
111
0
1
R/W
BRL
13
12
11
R/W
10
BL
Burst Read Latency
9
Read Mode
Definition
Definition
ECC
R/W
8
49
RDY
R/W
pol
7
Asynchronous read(default)
R/W
Synchronous read
INT
pol
Latency Cycles
6
3(up to 40MHz)
4(default, min.)
Read Mode
10(N/A)
8(N/A)
9(N/A)
IOBE
5
6
7
R/W
Selects between asynchronous read mode and
5
Specifies the access latency in the burst read
RDY
Conf
R/W
transfer for the initial access
4
synchronous read mode
FLASH MEMORY
Description
Description
3
Reserved(000)
R
2
1
BWPS
R
0