KFM2G16Q2M-DEB5 SAMSUNG [Samsung semiconductor], KFM2G16Q2M-DEB5 Datasheet - Page 69

• Manufacturer Part Number: KFM2G16Q2M-DEB5
• Description: MuxOneNAND FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
3.4.3.3 Locked-tight NAND Array Write Protection State
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command
sequences will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks
will revert to a locked state following a Cold or Warm Reset.
3.4.4
NAND Flash Array Write Protection State Diagram
+Lock-tight block Command
Lock block Command
Start block address
Start block address
RP pin: High
Cold reset or
Warm reset
RP pin: High
&
or
&
Locked-tight
Lock-tight
unlock
Lock
Lock
Lock
Lock
Lock
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Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
Cold reset or
Warm reset
+Unlock block Command
Start block address
RP pin: High
&
Power On
FLASH MEMORY