s3c4510b Samsung Semiconductor, Inc., s3c4510b Datasheet - Page 395

• Manufacturer Part Number: s3c4510b
• Description: 16/32-bit Risc Microcontroller
• Manufacturer: Samsung Semiconductor, Inc.

S3C4510B
(T
NOTE: The edge (N) is calculated from SCLK(MCLK) falling and (P) is rising.
A
= 0 to 70 C, V
Signal Name
tMCLKOd
tNCASwr
tNCASwf
tADDRd
tADDRh
tNWBE
tNRASf
tNRASr
tNCASf
tNCASr
tNDWE
tWDDd
tNROE
tNDOE
tWDDh
tNRCS
tNECS
tEMRs
tEMRh
tEMAr
tEMAf
tWDd
tWDh
tEMZ
tRDh
tRDs
tWs
tWh
DD
= 3.0 V to 3.6 V)
MCLKO delay for Internal Positive Edge Clock (MCLK)
Memory Control Signal High-Z Time
ExtMREQ Setup Time
ExtMREQ Hold Time
ExtMACK Rising Edge Delay Time
ExtMACK Falling Edge Delay Time
Address Hold Time
Address Delay Time
ROM/SRAM/Flash Bank Chip Select Delay Time
ROM/SRAM or External I/O Bank Output Enable Delay
ROM/SRAM or External I/O Bank Write Byte Enable Delay
Read Data Setup Time
Read Data Hold Time
Write Data Delay Time (SRAM or External I/O) (ref:nWBE)
Write Data Hold Time (SRAM or External I/O) (ref:MCLK)
DRAM Row Address Strobe Active Delay
DRAM Row Address Strobe Release Delay
DRAM Column Address Strobe Read Active Delay
DRAM CAS Signal Release Read Delay Time
DRAM Column Address Strobe Write Active Delay
DRAM CAS Signal Release Write Delay Time
DRAM Bank Write Enable Delay Time
DRAM Bank Out Enable Delay Time
External I/O Bank Chip Select Delay Time
DRAM Write Data Delay Time (DRAM)
DRAM Write Data Hold Time (DRAM)
External Wait Setup Time
External Wait Hold Time
Table 14-4. A.C Electrical Characteristics for S3C4510X
Description
4.03
4.99
9.55
9.30
4.75
6.76
3.24
3.81
3.36
1.86
2.05
3.53
4.95
3.58
3.57
3.60
3.62
3.93
3.80
3.58
4.96
2.70
Min
0
0
0
ELECTRICAL DATA
10.57
12.02
23.30
22.70
11.50
16.53
10.82
11.99
11.97
Max
3.90
7.90
9.24
8.13
4.49
4.86
8.59
8.70
8.62
8.72
8.73
9.54
9.26
8.74
6.42
4.82
Edge
P
N
P
P
N
N
N
N
N
N
P
N
N
N
N
P
N
P
P
N
N
N
N
N
N
N
N
N
14-3