mc68hc916y3 Freescale Semiconductor, Inc, mc68hc916y3 Datasheet - Page 207

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mc68hc916y3

Manufacturer Part Number
mc68hc916y3
Description
Mc68hc16y3 16 Bit Microcontroller
Manufacturer
Freescale Semiconductor, Inc
Datasheet
9.4.5.2 Erasure Sequence
MC68HC16Y3/916Y3
USER’S MANUAL
Use the following procedure to erase the TPUFLASH. Refer to Figures A-36 and A-
37 in APPENDIX A ELECTRICAL CHARACTERISTICS for V
during erasure. Figure 9-2 is a flowchart of the TPUFLASH erasure operation.
1. Turn on V
2. Set initial value of t
3. Set LAT, VFPE, and ERAS bits to configure the TPUFLASH module for era-
4. Write to any valid address in the control block or array. This allows the erase
5. Set ENPE to apply programming voltage.
6. Delay long enough for one erase pulse to occur (t
7. Clear ENPE to remove programming voltage.
8. Delay while high voltage is turning off (t
9. Clear LAT, ERAS, and VFPE to allow normal access to the TPUFLASH.
10. Read the entire array and control block to ensure that the entire module is
11. If all of the locations are not erased, calculate a new value for t
12. If all locations are erased, calculate t
13. Turn off V
sure.
voltage to be turned on. The data written and the address written to are of no
consequence.
erased.
steps 3 through 10 until either the remaining locations are erased or the maxi-
mum erase time (t
locations do not remain erased, the TPUFLASH array may be bad.
FPE1K
FPE1K
Freescale Semiconductor, Inc.
For More Information On This Product,
(apply program/erase voltage to V
(reduce voltage on V
erasemax
epulse
TPU FLASH EEPROM MODULE
Go to: www.freescale.com
to t
) has expired.
emin
.
emargin
FPE1K
verase
and repeat steps 3 through 10. If all
pin to V
).
epulse
FPE1K
DD
).
FPE
).
pin).
to V
epulse
DD
relationships
MOTOROLA
and repeat
9-7

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