mc68hc916y3 Freescale Semiconductor, Inc, mc68hc916y3 Datasheet - Page 198

• Manufacturer Part Number: mc68hc916y3
• Description: Mc68hc16y3 16 Bit Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

8.3.5.1 Erasure
8-6
MOTOROLA
The following steps are used to erase a flash EEPROM array. Figure 8-2 is a flowchart
of the erasure operation. Refer to Figures A-36 and A-37 in APPENDIX A ELECTRI-
CAL CHARACTERISTICS for V
1. Increase voltage applied to the V
2. Set the ERAS bit and the LAT bit in FEExCTL. This configures the module for
3. Perform a write to any valid address in the control block or array. The data writ-
4. Set the ENPE bit in FEExCTL. This applies the erase voltage to the array.
5. Delay the proper amount of time for one erase pulse. Delay is specified by pa-
6. Clear the ENPE bit in FEExCTL. This turns off erase voltage to the array.
7. Delay while high voltage to array is turned off. Delay is specified by parameter
8. Read the entire array and control block to ensure all locations are erased.
9. If all locations are not erased, calculate a new value for t
10. If all locations are erased, calculate the erase margin (e
11. Clear the LAT and ERAS bits in FEExCTL. This allows normal access to the
12. Reduce voltage applied to the V
erasure.
ten does not matter.
rameter t
t er .
and repeat steps 3 through 10 until all locations erase, or the maximum number
of pulses has been applied.
through 10 for the single margin pulse.
flash.
epk
.
Freescale Semiconductor, Inc.
For More Information On This Product,
FLASH EEPROM MODULE
Go to: www.freescale.com
FPE
to V
FPE
FPE
DD
pin to normal read level.
relationships during erasure.
pin to program/erase/verify level.
epk
m
) and repeat steps 3
(t
MC68HC16Y3/916Y3
ei
USER’S MANUAL
pulse number)