MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 92

• Manufacturer Part Number: MC68HC908AS60CFN
• Description: IC MCU 60K FLASH 8MHZ 52-PLCC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908AS60CFN

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8.4MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 40
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 15x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 52-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

EEPROM-1
6.4.2 EEPROM Erasing
Technical Data
The unprogrammed state is a logic 1. Only the valid EEPROM bytes in
the non-protected blocks and EENVR1 can be erased. When the array
is configured in the redundant mode, erasing the first 256 bytes also will
erase the last 256 bytes.
Using this step-by-step procedure erases EEPROM:
EEBPx bit must be cleared to erase EEPROM data in the corresponding
block. If any EEBPx is set, the corresponding block cannot be erased
and bulk erase mode does not apply.
Notes:
1. Clear/set EERAS1 and EERAS0 to select byte/block/bulk erase,
2. Write any data to the desired address for byte erase, to any
3. Set the EEPGM bit. (See note b.)
4. Wait for a time, t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Clear EELAT bits. (See note c.)
8. Repeat steps 1 to 7 for more EEPROM byte/block erasing.
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a. Setting EELAT bit configures the address and data buses to latch
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and set EELAT in EECR1. (See note a.)
address in the desired block for block erase, or to any array
address for bulk erase.
data for erasing the array. Only valid EEPROM addresses with
their data will be latched. If another consecutive valid EEPROM
write occurs, this address and data will override the previous
address and data. In block erase mode, any EEPROM address in
the block may be used in step 2. All locations within this block will
be erased. In bulk erase mode, any EEPROM address may be
used to erase the whole EEPROM. EENVR1 is not affected with
block or bulk erase. Any attempts to read other EEPROM data will
read the latched data. If EELAT is set, other writes to the EECR1
will be allowed only after a valid EEPROM write.
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EEPROM-1
EEPGM
EEFPV
, for the erasing voltage to fall.
/t
EEBLOCK
/t
EEBULK.
MC68HC908AS60 — Rev. 1.0
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